MT4VDDT1664AG-40BF3 Micron Technology Inc, MT4VDDT1664AG-40BF3 Datasheet - Page 26

• Manufacturer Part Number: MT4VDDT1664AG-40BF3
• Description: MODULE DDR 128MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT1664AG-40BF3

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 16Mx64
• Total Density: 128MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.04A
• Number Of Elements: 4
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21: Serial Presence-Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”
pdf: 09005aef80a43556, source: 09005aef80a43534
DDA8C16_32_64x64AG.fm - Rev. D 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on
Assembly
Number of Column Addresses on
Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
3)
SDRAM Access From Clock,
(CAS Latency = 3)
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
2.5)
SDRAM Access From CK,
Latency = 2.5)
SDRAM Cycle Time,
2)
SDRAM Access From CK,
Latency = 2)
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
t
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
RRD
DESCRIPTION
t
t
t
CK, (CAS Latency =
CK, (CAS Latency =
CK (CAS Latency =
t
AC, (CAS
t
AC (CAS
t
AC,
t
RAS
t
RCD
t
RP
ENTRY (VERSION) MT8VDDT1664A MT8VDDT3264A MT8VDDT6464A
128MB, 256MB or
Fast / Concurrent
128MB, 256MB, 512MB (x64, SR) PC3200
15.6, 7.81µs/SELF
0.7ns (for PC2700
Auto Precharge
6ns (for PC2700
0.75ns (PC2100,
7.5ns (PC2100,
SDRAM DDR
Unbuffered
Unbuffered
15ns (-40B)
10ns (-40B)
15ns (-40B)
40ns (-40B)
5ns (-40B)
SSTL 2.5V
0.7 (-40B)
compat.)
compat.)
12 or 13
10 or 11
PC1600)
PC1600)
3, 2.5, 2
1 clock
512MB
2, 4, 8
None
128
256
64
1
0
8
4
0
1
26
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
0A
80
08
07
0C
01
40
00
04
50
70
00
80
08
00
01
0E
04
1C
01
02
20
C0
60
70
75
75
3C
28
3C
28
20
0D
0A
80
08
07
01
40
00
04
50
70
00
82
08
00
01
0E
04
1C
01
02
20
C0
60
70
75
75
3C
28
3C
28
40
©2004 Micron Technology. Inc.
0D
80
08
07
0B
01
40
00
04
50
70
00
82
08
00
01
0E
04
1C
01
02
20
C0
60
70
75
75
3C
28
3C
28
80