MT16VDDT6464AG-335GB Micron Technology Inc, MT16VDDT6464AG-335GB Datasheet - Page 20

• Manufacturer Part Number: MT16VDDT6464AG-335GB
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT6464AG-335GB

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Notes
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
10. I
11. This parameter is sampled. V
1. All voltages referenced to V
2. Tests for AC timing, I
3. Outputs measured with equivalent load:
4. AC timing and I
5. The AC and DC input level specifications are as
6. V
7. V
8. I
9. Enables on-chip refresh and address counters.
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
and V
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on V
DC value. Thus, from V
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest V
system supply for signal termination resistors, is
expected to be set equal to V
variations in the DC level of V
rates. Specified values are obtained with mini-
mum cycle time at CL = 2 for -262, and -26A, CL =
2.5 for -335 and -265 with the outputs open.
properly initialized, and is averaged at the defined
cycle rate.
V
DD
DD
REF
TT
DD
Q = +2.5V ±0.2V, V
is not applied directly to the device. V
is dependent on output loading and cycle
specifications are tested after the device is
is expected to equal V
IH
(AC).
REF
Output
(V
REF
bypass capacitor.
OUT
may not exceed ±2 percent of the
)
DD
V
DD
TT
tests may use a V
REF
50
30pF
, and electrical AC and DC
Reference
Point
DD
= V
SS
DD
Q/2, VREF is allowed
.
REF
SS
Q/2 of the transmit-
REF
DD
, f = 100 MHz, T
.
and must track
= +2.5V ±0.2V,
REF
(or to the
IL
-to-V
TT
IL
(AC)
is a
A
IH
=
20
256MB, 512MB, 1GB, 2GB (x64, DR)
12. For slew rates less than 1 V/ns and greater than or
13. The CK/CK# input reference level (for timing ref-
14. Inputs are not recognized as valid until V
15. The output timing reference level, as measured at
16.
17. The intent of the Don’t Care state after completion
18. This is not a device limit. The device will operate
19. It is recommended that DQS be valid (HIGH or
20. MIN (
21. The refresh period 64ms. This equates to an aver-
25°C, V
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
equal to 0.5 V/ns. If slew rate is less than 0.5 V/ns,
timing must be derated:
per each 100mV/ns reduction in slew rate from
500mV/ns, while
exceeds 4.5V/ns, functionality is uncertain.
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
lizes. Exception: during the period before V
stabilizes, CKE 0.3 x V
the timing reference point indicated in Note 3, is
V
t
time windows as valid data transitions. These
parameters are not referenced to a specific voltage
level, but specify when the device output is no
longer driving (HZ) or begins driving (LZ).
of the postamble is the DQS-driven signal should
either be high, low, or high-Z and that any signal
transition within the input switching region must
follow valid input requirements. That is, if DQS
transitions high [above V
not transition low (below V
t
with a negative value, but system performance
could be degraded due to bus turnaround.
LOW) on or before the WRITE command. The
case shown (DQS going from High-Z to logic
LOW) applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
smallest multiple of
absolute value for the respective parameter.
(MAX) for I
ple of
value for
age refresh rate of 15.625µs (256MB) or 7.8125µs
(512MB, 1GB, 2GB). However, an AUTO REFRESH
command must be asserted at least once every
HZ and
DQSH(MIN).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
184-PIN DDR SDRAM UDIMM
.
t
RC or
OUT
t
CK that meets the maximum absolute
t
t
LZ transitions occur in the same access
RAS.
DD
(DC) = V
t
RFC) for I
t
measurements is the largest multi-
DQSS.
t
IH is unaffected. If slew rate
DD
t
CK that meets the minimum
Q/2, V
REF
DD
t
DD
IS has an additional 50ps
IHDC
Q is recognized as LOW.
.
measurements is the
OUT
(MIN)] then it must
IHDC
(peak to peak) =
©2004 Micron Technology, Inc.
) prior to
REF
stabi-
t
RAS
REF