MT16VDDT6464AG-335GB Micron Technology Inc, MT16VDDT6464AG-335GB Datasheet - Page 32

• Manufacturer Part Number: MT16VDDT6464AG-335GB
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT6464AG-335GB

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 23: Serial Presence-Detect Matrix (2GB)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 31
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
1)
SDRAM Access From Clock,
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary DDR SDRAM)
Error-Checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random Column
Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access From CK,
SDRAM Cycle Time,
SDRAM Access From CK,
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum Ras# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
Address and Command Setup Time,
DESCRIPTION
t
t
t
CK, (CAS Latency = 2.5) (See note
CK, (CAS Latency = 2)
CK, (CAS Latency = 1.5)
t
t
AC, (CAS Latency = 2)
AC, (CAS Latency = 1.5)
t
AC, (CAS Latency = 2.5)
t
RAS, (see note 2)
t
RCD (see note 4)
t
RP (see note 4)
t
IS, (see note 3)
t
RRD
32
256MB, 512MB, 1GB, 2GB (x64, DR)
Unbuffered/Diff. Clock
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
15ns (-262/-26A/-265)
45ns (-262/-26A/-265)
1.0ns (-262-26A/-265)
7.5ns (-335/-262/-26A)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ENTRY (VERSION)
Fast/Concurrent AP
15.62µs, 7.8µs/SELF
184-PIN DDR SDRAM UDIMM
20ns (-26A/-265)
20ns (-26A/-265)
7ns (-262/-26A)
SDRAM DDR
7.5ns (-265)
0.7ns (-335)
0.7ns (-335)
0.8ns (-335)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
6ns (-335)
SSTL 2.5V
1 clock
2, 4, 8
None
None
2, 2.5
1GB
128
256
N/A
N/A
14
11
64
2
0
8
4
0
1
MT16VDDT25664A
©2004 Micron Technology, Inc.
A0
2A
2D
A0
0B
0C
C0
3C
3C
3C
80
08
07
0E
02
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
01
02
20
75
70
75
00
00
48
50
30
48
50
01
80