MT16VDDT6464AG-335GB Micron Technology Inc, MT16VDDT6464AG-335GB Datasheet - Page 23

• Manufacturer Part Number: MT16VDDT6464AG-335GB
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT6464AG-335GB

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
41. The current Micron part operates below the slow-
42. Random addressing changing and 50 percent of
43. Random addressing changing and 100 percent of
44. CKE must be active (high) during the entire time a
45. I
est JEDEC operating frequency of 83 MHz. As
such, future die may not reflect this option.
data changing at every transfer.
data changing at every transfer.
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. I
similar to I
REF later.
DD
2N specifies the DQ, DQS, and DM to be
DD
2F except I
DD
2Q specifies the
DD
2Q is
23
256MB, 512MB, 1GB, 2GB (x64, DR)
46. Whenever the operating frequency is altered, not
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. The -335 speed grade will operate with
address and control inputs to remain stable.
Although I
I
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles.
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic HIGH or logic LOW.
= 40ns and
frequency.
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
2F is “worst case.”
DD
t
RAS (MAX) = 120,000ns at any slower
2F, I
DD
2N, and I
DD
©2004 Micron Technology, Inc.
2Q are similar,
t
RAS (MIN)