AG920-07E NVE, AG920-07E Datasheet - Page 79

KIT EVALUATION GT SENSOR

AG920-07E

Manufacturer Part Number
AG920-07E
Description
KIT EVALUATION GT SENSOR
Manufacturer
NVE
Datasheets

Specifications of AG920-07E

Sensor Type
Magnetic. GMR (Giant Magnetoresistive)
Interface
Analog
Embedded
No
Utilized Ic / Part
ABL & AKL Series GT Sensors
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Sensitivity
-
Sensing Range
-
Other names
391-1063
Application Notes
General Comments
NVE GMR sensors are designed to measure or sense magnetic field strength over a wide range of
fields. GMR sensors directly detect magnetic field rather than the rate of change in magnetic field;
therefore, they are useful as DC field sensors. NVE’s GMR sensors are sensitive to small changes in
magnetic fields. This allows for accurate measurement of position or displacement in linear or
rotational systems. The extremely small size of the sensing element enhances the position sensitivity,
especially in applications incorporating small magnets and large field gradients. Magnetic fields
produced by current carrying conductors make our devices usable as current sensors or detectors.
Competitive Technologies
GMR sensors have greater output than conventional anisotropic magnetoresistive (AMR) sensors or
Hall effect sensors, and are able to operate at fields well above the range of AMR sensors. In addition,
high fields will not “flip” GMR sensors or reverse their output as is possible with AMR sensors. High
fields will also not cause damage to NVE GMR sensors, as is the case with some competing GMR
sensor products.
The output of GMR sensors is frequency insensitive up to 1 MHz. GMR sensors produce an output
with a constant field. This sets them apart from inductive (variable reluctance) field sensors, which
respond only to changes in magnetic field. High resistivity GMR material enables the fabrication of
sensors with high resistance. Sensors with 5 kΩ resistance is standard. Special low power devices can
be manufactured with 30 kΩ or higher resistance. Sensors can also be fabricated with built-in offset at
zero field that provide for a zero crossing in output at a specified field value.
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