AG920-07E NVE, AG920-07E Datasheet - Page 82

• Manufacturer Part Number: AG920-07E
• Description: KIT EVALUATION GT SENSOR
• Manufacturer: NVE

Specifications of AG920-07E

• Sensor Type: Magnetic. GMR (Giant Magnetoresistive)
• Interface: Analog
• Embedded: No
• Utilized Ic / Part: ABL & AKL Series GT Sensors
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Sensitivity: -
• Sensing Range: -
• Other names: 391-1063

The end result in this case is that the mean free path length of the conduction electrons is fairly short,
resulting in a relatively high electrical resistance.
If an external magnetic field of sufficient magnitude is applied to this GMR material, it will overcome
the antiferromagnet coupling of the magnetizations between the two magnetic layers. At this point all
the electrons in both films will have the same spin. It will then become easier for the electrons two
move between the layers:
Note that the mean free path length of the electrons has now increased. This results in an overall lower
electrical resistance for the GMR material. The change in resistivity of the material is shown on the
path length diagram below:
Resistivity
Applying the External Field Results in Lower Device Resistance
Resistivity Plot Showing Operate Points of GMR Material
the Magnetization Directions of
External Magnetic Field Aligns
With and Without an External Magnetic Field Applied;
Top and Bottom Films
Electrons Travel More Readily Through Entire Stack of GMR Material.
Mean Free Path Length of an Electron (Angstroms)
50
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Spin States of the Magnetic Layers are the same;
Average Mean Free Path of the Electrons is Long
No External Field Applied
100
Operate Point of Film,
Magnetization Direction of Top Film
Magnetization Direction of Bottom Film
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with External Field Applied
Operate Point of Film
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150
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
Conductive Interlayer
Application Notes
Bottom Film
Top Film