DEMO9S08EL32 Freescale Semiconductor, DEMO9S08EL32 Datasheet - Page 350

• Manufacturer Part Number: DEMO9S08EL32
• Description: BOARD DEMO FOR 9S08 EL MCU
• Manufacturer: Freescale Semiconductor
• Type: MCUr

Specifications of DEMO9S08EL32

• Contents: Evaluation Board
• Processor To Be Evaluated: MC9S08EL32
• Data Bus Width: 8 bit
• Interface Type: RS-232, USB
• Operating Supply Voltage: 12 V
• Silicon Manufacturer: Freescale
• Core Architecture: HCS08
• Core Sub-architecture: HCS08
• Silicon Core Number: MC9S08
• Silicon Family Name: S08EL
• Rohs Compliant: Yes
• For Use With/related Products: MC9S08EL32
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Appendix A Electrical Characteristics
A.13 Flash and EEPROM Specifications
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
352
Num
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
(CPOL = 0)
(CPOL = 1)
(OUTPUT)
(INPUT)
(INPUT)
(INPUT)
(INPUT)
NOTE:
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
MISO
MOSI
SCK
SCK
T
T = 25°C
1. Not defined but normally LSB of character just received
L
SS
to T
H
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
= –40°C to +125°C
Characteristic
NOTE
SEE
2
2
8
Figure A-17. SPI Slave Timing (CPHA = 1)
2
SLAVE
5
4
1
6
FCLK
Table A-16. Flash Characteristics
10
3
MSB IN
1
)
MSB OUT
2
7
5
4
2
V
Symbol
prog/erase
V
n
f
t
t
t
t
t
FCLK
Burst
Mass
Page
Fcyc
prog
FLPE
Read
11
BIT 6 . . . 1
BIT 6 . . . 1
10,000
Min
150
2.7
2.7
5
100,000
Typical
SLAVE LSB OUT
20,000
4000
3
—
9
4
LSB IN
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
9
DD
cycles
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V