FDH600 Fairchild Semiconductor, FDH600 Datasheet
FDH600
Manufacturer Part Number
FDH600
Description
DIODE HI COND FAST 50V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDH600.pdf
(3 pages)
Specifications of FDH600
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 50V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2.5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ã 1997 Fairchild Semiconductor Corporation
P
R
W
I
I
i
i
T
T
Symbol
Symbol
f
f(surge)
O
F
D
stg
J
Absolute Maximum Ratings*
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
JA
IV
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Derate above 25 C
DO-35
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Characteristic
Parameter
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
FDH / FDLL 600
TA = 25°C unless otherwise noted
LL-34
TA = 25°C unless otherwise noted
FDH/FDLL 600
FDLL600
Discrete POWER & Signal
DEVICE
Max
3.33
500
300
-65 to +200
COLOR BAND MARKING
Value
600
200
400
175
1.0
4.0
50
1ST BAND 2ND BAND
RED
Technologies
WHITE
Units
Units
mW/ C
mA
mA
mA
mW
C/W
V
A
A
C
C
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FDH600 Summary of contents
Page 1
... Characteristic P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ã 1997 Fairchild Semiconductor Corporation FDH / FDLL 600 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted FDH/FDLL 600 Discrete POWER & ...
Page 2
Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR High Conductance Ultra Fast Diode TA = 25°C unless otherwise noted Test Conditions I = ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...