MC9S08DZ60ACLF Freescale Semiconductor, MC9S08DZ60ACLF Datasheet - Page 67

• Manufacturer Part Number: MC9S08DZ60ACLF
• Description: IC MCU 60K FLASH 4K RAM 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08DZ60ACLF

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: CAN, I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: S08DZ
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 4 KB
• Interface Type: CAN, I2C, SCI, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08DZ60
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 24 Channel
• For Use With: DEMO9S08DZ60 - BOARD DEMOEVB9S08DZ60 - BOARD EVAL FOR 9S08DZ60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.6
MC9S08DZ128 Series devices include FLASH and EEPROM memory intended primarily for program
and data storage. In-circuit programming allows the operating program and data to be loaded into FLASH
and EEPROM, respectively, after final assembly of the application product. It is possible to program the
arrays through the single-wire background debug interface. Because no special voltages are needed for
erase and programming operations, in-application programming is also possible through other
software-controlled communication paths. For a more detailed discussion of in-circuit and in-application
programming, refer to the HCS08 Family Reference Manual, Volume I, Freescale Semiconductor
document order number HCS08RMv1.
4.6.1
Features of the FLASH and EEPROM memory include:
4.6.2
Before any program or erase command can be accepted, the FLASH and EEPROM clock divider register
(FCDIV) must be written to set the internal clock for the FLASH and EEPROM module to a frequency
(f
Register
reset initialization. The user must ensure that FACCERR is not set before writing to the FCDIV register.
One period of the resulting clock (1/f
pulses. An integer number of these timing pulses is used by the command processor to complete a program
or erase command.
Freescale Semiconductor
FCLK
•
•
•
•
•
•
•
•
•
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) between 150 kHz and 200 kHz (see
Up to 128K of FLASH and up to 2K of EEPROM (see
FLASH sector size: 512 bytes
EEPROM sector size: selectable 4-byte or 8-byte sector mapping operation
Single power supply program and erase
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
Flexible block protection
Security feature for FLASH, EEPROM, and RAM
Burst programming capability
Sector erase abort
(FCDIV)”). This register can be written only once, so normally this write is performed during
FLASH and EEPROM
Features
Program and Erase Times
When changing from a low power mode (Stop2 mode or bus frequency less
than 150kHz) into an operating condition that allows program or erase, it is
necessary to wait at least 10μs before starting a program or erase command.
MC9S08DZ128 Series Data Sheet, Rev. 1
FCLK
) is used by the command processor to time program and erase
Section 4.6.11.1, “FLASH and EEPROM Clock Divider
NOTE
Table 1-1
for exact array sizes)
Chapter 4 Memory
67