ST7FLITEU05M3TR STMicroelectronics, ST7FLITEU05M3TR Datasheet - Page 23

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ST7FLITEU05M3TR

Manufacturer Part Number
ST7FLITEU05M3TR
Description
IC MCU 8BIT 2K FLASH 8SOIC
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet

Specifications of ST7FLITEU05M3TR

Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
5
Program Memory Size
2KB (2K x 8)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.4 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Processor Series
ST7FLITEUx
Core
ST7
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
ICC
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
5
Number Of Timers
2
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Development Tools By Supplier
ST7FUS-PRIMER, ST7FLITE-SK/RAIS, ST7FLITU0-D/RAIS, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 5 Channel
For Use With
497-5858 - EVAL BOARD PLAYBACK ST7FLITE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
 Details
ST7LITEU05 ST7LITEU09
5
5.1
5.2
5.3
5.3.1
Data EEPROM
Introduction
The electrically erasable programmable read only memory can be used as a non volatile
back-up for storing data. Using the EEPROM requires a basic access protocol described in
this chapter.
Main features
Figure 7.
Memory access
The data EEPROM memory read/write access modes are controlled by the E2LAT bit of the
EEPROM Control/Status register (EECSR). The flowchart in
different memory access modes.
Read operation (E2LAT=0)
The EEPROM can be read as a normal ROM location when the E2LAT bit of the EECSR
register is cleared.
EECSR
Up to 32 bytes programmed in the same cycle
EEPROM mono-voltage (charge pump)
Chained erase and programming cycles
Internal control of the global programming cycle duration
Wait mode management
Readout protection
EEPROM block diagram
0
ADDRESS BUS
0
DECODER
ADDRESS
0
0
4
0
DECODER
0
4
4
ROW
E2LAT
E2PGM
128
MULTIPLEXER
DATA
(1 ROW = 32 x 8 BITS)
MEMORY MATRIX
HIGH VOLTAGE
Figure 8
DATA BUS
EEPROM
PUMP
DATA LATCHES
128
32 x 8 BITS
describes these
Data EEPROM
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