HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 29

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 19 ROM (32-kbyte Dual-Power-Supply Flash Memory Version)
19.1 Flash Memory Overview ................................................................................................... 373
19.2 Flash Memory Register Descriptions ................................................................................ 377
19.3 On-Board Programming Modes ........................................................................................ 383
19.4 Programming and Erasing Flash Memory......................................................................... 392
19.5 Flash Memory Emulation by RAM ................................................................................... 413
19.6 Flash Memory Writer Mode (H8/3334YF) ....................................................................... 416
19.7 Flash Memory Programming and Erasing Precautions ..................................................... 426
Section 20 ROM (60-kbyte Dual-Power-Supply Flash Memory Version)
20.1 Flash Memory Overview ................................................................................................... 433
20.2 Flash Memory Register Descriptions ................................................................................ 437
19.1.1 Flash Memory Operating Principle ...................................................................... 373
19.1.2 Mode Programming and Flash Memory Address Space...................................... 374
19.1.3 Features ................................................................................................................ 374
19.1.4 Block Diagram...................................................................................................... 375
19.1.5 Input/Output Pins.................................................................................................. 376
19.1.6 Register Configuration ......................................................................................... 376
19.2.1 Flash Memory Control Register (FLMCR).......................................................... 377
19.2.2 Erase Block Register 1 (EBR1)............................................................................ 378
19.2.3 Erase Block Register 2 (EBR2)............................................................................ 379
19.2.4 Wait-State Control Register (WSCR) .................................................................. 380
19.3.1 Boot Mode............................................................................................................ 384
19.3.2 User Programming Mode ..................................................................................... 390
19.4.1 Program Mode...................................................................................................... 392
19.4.2 Program-Verify Mode .......................................................................................... 393
19.4.3 Programming Flowchart and Sample Program .................................................... 394
19.4.4 Erase Mode........................................................................................................... 396
19.4.5 Erase-Verify Mode ............................................................................................... 396
19.4.6 Erasing Flowchart and Sample Program .............................................................. 397
19.4.7 Prewrite Verify Mode........................................................................................... 410
19.4.8 Protect Modes....................................................................................................... 410
19.4.9 Interrupt Handling during Flash Memory Programming and Erasing ................. 411
19.6.1 Writer Mode Setting ............................................................................................. 416
19.6.2 Socket Adapter and Memory Map ....................................................................... 416
19.6.3 Operation in Writer Mode .................................................................................... 418
20.1.1 Flash Memory Operating Principle ...................................................................... 433
20.1.2 Mode Programming and Flash Memory Address Space...................................... 434
20.1.3 Features ................................................................................................................ 434
20.1.4 Block Diagram...................................................................................................... 435
20.1.5 Input/Output Pins.................................................................................................. 436
20.1.6 Register Configuration ......................................................................................... 436
20.2.1 Flash Memory Control Register (FLMCR).......................................................... 437
........ 373
........ 433
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