HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 518

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

20.7
Read these precautions before using writer mode, on-board programming mode, or flash memory
emulation by RAM.
(1) Program with the specified voltages and timing.
The rated programming voltage (V
If the PROM programmer is set to Hitachi HN28F101 specifications, V
voltages in excess of the rating can permanently damage the device. Take particular care to ensure
that the PROM programmer peak overshoot does not exceed the rated limit of 13 V.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer. Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while programming. Touching either of these can
cause contact faults and write errors.
486
V
V
Note: Erase-verify data output values may be intermediate between 1 and 0 before erasing has been completed.
Address
CE
OE
WE
I/O0 to I/O7
CC
PP
5.0 V
12 V
5.0 V
Flash Memory Programming and Erasing Precautions
t
t
CES
VPS
t
OEWS
t
t
WEP
DS
Command
input
t
CEH
t
Erase setup
DH
t
CWC
t
WEH
Figure 20.19 Erase Timing
PP
t
CES
) of the flash memory is 12.0 V.
t
WEP
Command
t
t
DS
CEH
input
t
DH
Erase
t
ET
t
CES
t
Valid address
AS
Command
t
t
WEP
DS
input
t
AH
t
DH
t
CEH
PP
t
OERS
Erase-verify
will be 12.0 V. Applying
t
VA
Valid data
output
t
VPH
t
DF