HD6417750SF167V Renesas Electronics America, HD6417750SF167V Datasheet - Page 212

MPU 3V 16K PB-FREE 208-QFP

HD6417750SF167V

Manufacturer Part Number
HD6417750SF167V
Description
MPU 3V 16K PB-FREE 208-QFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750SF167V

Core Processor
SH-4
Core Size
32-Bit
Speed
167MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.6 V ~ 2 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
208-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

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Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750SF167V
Manufacturer:
INTERSIL
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Part Number:
HD6417750SF167V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 4 Caches
Note: This includes a break triggered by a debugging tool swapping an instruction (a break
Condition 4: A store instruction (MOV, FMOV, AND.B, OR, B, XOR.B, MOVCA.L, STC.L, or
Description: When the problem occurs, 8 bytes of incorrect data is written to the 8-byte boundary
that includes an address that differs by H'2000 from the address accessed by the store instruction
that accesses internal RAM mentioned in condition 4. For example, when a long word is stored at
address H'7C000204, the 8 bytes of data in the internal RAM mapped to addresses H'7C002200 to
H'7C002207 becomes corrupted.
Examples
Example 1 A store instruction accessing internal RAM occurs within four instructions after an
MOV.L #H'0C400000, R0
MOV.L #H'7C000204, R1
MOV.L @R0, R2
NOP
NOP
NOP
MOV.L R3, @R1
Example 2 A store instruction accessing internal RAM occurs within four instructions after an
MOV.L #H'7C002000, R1
MOV.L #H'12345678, R0
NOP
NOP
NOP
MOV.L R0, @R1
Rev.7.00 Oct. 10, 2008 Page 126 of 1074
REJ09B0366-0700
occurring when a TRAPA instruction or undefined instruction code H'FFFD is swapped
for an instruction).
instruction generating a TLB miss exception.
instruction causing an interrupt to be accepted.
STS.L) that accesses internal RAM (H'7C000000 to H'7FFFFFFF) exists within four
instructions after the instruction associated with the exception or interrupt described
in condition 3. This includes cases where the store instruction that accesses internal
RAM itself generates an exception.
R0 is an address causing a TLB miss.
R1 is an address mapped to internal RAM.
TLB miss exception occurs.
1st word
2nd word
3rd word
Store instruction accessing internal RAM
R1 is an address mapped to internal RAM.
An interrupt is accepted after this instruction.
1st word
2nd word
3rd word
Store instruction accessing internal RAM

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