MC68HC908GR16VFJ Freescale Semiconductor, MC68HC908GR16VFJ Datasheet - Page 40
MC68HC908GR16VFJ
Manufacturer Part Number
MC68HC908GR16VFJ
Description
IC MCU 16K FLASH 8MHZ SPI 32LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68908GR16CFJE.pdf
(276 pages)
Specifications of MC68HC908GR16VFJ
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
21
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Quantity
Price
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Part Number:
MC68HC908GR16VFJ
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Memory
2.6.1.2 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as a 1. A page
consists of 64 consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 44-byte
user interrupt vectors area also forms a page. Any FLASH memory page can be erased alone.
In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification
to get improved long-term reliability. Any application can use this 4-ms page erase specification.
However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,
and speed is important, use the 1-ms page erase specification to get a shorter cycle time.
40
10. After a time, t
1. Set the ERASE bit, and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
A page erase of the vector page will erase the internal oscillator trim value
at $FFC0.
RCV
NVS
Erase
NVH
(typical 1 μs), the memory can be accessed again in read mode.
(minimum 10 μs)
(minimum 5 μs)
(minimum 1 ms or 4 ms)
MC68HC908GR16 Data Sheet, Rev. 5.0
CAUTION
NOTE
Freescale Semiconductor
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