STE53NC50 STMicroelectronics, STE53NC50 Datasheet - Page 3

MOSFET N-CH 500V 53A ISOTOP

STE53NC50

Manufacturer Part Number
STE53NC50
Description
MOSFET N-CH 500V 53A ISOTOP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STE53NC50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 27A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
434nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
42 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
53 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2776-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE53NC50
Manufacturer:
MITSUBISHI
Quantity:
1 000
Part Number:
STE53NC50
Quantity:
214
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
Q
d(on)
Q
RRM
I
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
t
rr
gd
c
r
gs
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 53A, V
= 53A, di/dt = 100A/µs,
= 250V, I
= 400V, I
= 10V
= 70V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
j
GS
D
D
D
= 150°C
Thermal Impedence
= 26.5A
= 53A,
= 53A,
= 0
= 10V
= 10V
Min.
Min.
Min.
17.86
Typ.
Typ.
Typ.
310
150
760
46
70
46
47
45
38
85
Max.
Max.
Max.
434
212
1.6
53
STE53NC50
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
3/8

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