STE53NC50 STMicroelectronics, STE53NC50 Datasheet - Page 7

• Manufacturer Part Number: STE53NC50
• Description: MOSFET N-CH 500V 53A ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STE53NC50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 434nC @ 10V
• Input Capacitance (ciss) @ Vds: 11200pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 42 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 53 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2776-5

DIM.
G
M
O
A
B
C
D
E
F
H
K
N
J
L
N
25.15
MIN.
11.8
1.95
0.75
12.6
31.5
14.9
30.1
37.8
8.9
4.1
7.8
4
4
O
J
G
K
L
M
ISOTOP MECHANICAL DATA
TYP.
mm
MAX.
12.2
2.05
0.85
12.8
25.5
31.7
15.1
30.3
38.2
9.1
4.3
8.2
0.466
0.350
0.076
0.029
0.496
0.990
1.240
0.157
0.161
0.586
1.185
1.488
0.157
0.307
MIN.
B
A
C
TYP.
inch
STE53NC50
MAX.
0.480
0.358
0.080
0.033
0.503
1.003
1.248
0.169
0.594
1.193
1.503
0.322
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