STE53NC50 STMicroelectronics, STE53NC50 Datasheet - Page 5
STE53NC50
Manufacturer Part Number
STE53NC50
Description
MOSFET N-CH 500V 53A ISOTOP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STE53NC50.pdf
(8 pages)
Specifications of STE53NC50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 27A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
434nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
42 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
53 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2776-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STE53NC50
Manufacturer:
MITSUBISHI
Quantity:
1 000
Part Number:
STE53NC50
Quantity:
214
STE53NC50
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8