STE250NS10 STMicroelectronics, STE250NS10 Datasheet - Page 12

• Manufacturer Part Number: STE250NS10
• Description: MOSFET N-CH 100V 220A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE250NS10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 125A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 220A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 900nC @ 10V
• Input Capacitance (ciss) @ Vds: 31000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 220 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3167-5

Mounting information
12/14
Table 11.
Figure 21. Mounting section
Figure 22. Cross form
Table 12.
Elementary box (bulk quantity)
Contact area (screw version)
Connectors (continued)
Package for shipment
Ordered quantity
Lead inductance
Shipment
Parameter
Tube
Doc ID 8220 Rev 3
10 pcs + contact set (screw +washer)
100 pieces (10 tubes)
Multiples of 10 pcs
Details
45 mm
≤ 5 nH
Value
2
STE250NS10