STE250NS10 STMicroelectronics, STE250NS10 Datasheet - Page 4

• Manufacturer Part Number: STE250NS10
• Description: MOSFET N-CH 100V 220A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE250NS10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 125A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 220A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 900nC @ 10V
• Input Capacitance (ciss) @ Vds: 31000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 220 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3167-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
V
Symbol
Symbol
Symbol
R
V
CASE
(BR)DSS
t
t
t
I
C
I
DS(on)
r(Voff)
GS(th)
C
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
g
t
oss
t
t
t
rss
iss
fs
gs
gd
c
r
f
f
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage rise time
fall time
cross-over time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Dynamic
On/off states
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 8220 Rev 3
I
V
V
T
V
V
V
D
V
R
(see
V
R
(see
V
R
(see
V
V
V
V
V
C
GS
GS
DS
DS
DS
DD
DD
DD
DS
DS
GS
DD
GS
G
G
G
= 1 mA, V
=125°C
=4.7 Ω, V
=4.7 Ω, V
=4.7 Ω, V
= max rating,
= max rating
= ± 20 V
= V
= 10 V, I
=50 V, I
=50 V, I
=80 V, I
Test conditions
= 20 V
= 25 V, f = 1 MHz,
= 0
= 10 V
Test conditions
= 50 V, I
Test conditions
Figure
Figure
Figure
GS
, I
,
GS
D
D
D
D
14)
13)
15)
D
I
D
=125 A,
GS
=125 A,
GS
=220 A,
GS
D
= 250 µA
= 125 A
=70 A
= 0
= 22 A,
= 10 V
= 10 V
=10 V
Min.
Min.
100
Min.
2
-
-
-
-
-
-
0.0045 0.0055
Typ.
Typ.
1100
900
160
330
Typ.
4.3
1.2
110
380
300
950
330
600
60
31
3
STE250NS10
Max.
Max.
Max.
±400
500
50
-
-
-
-
-
-
4
Unit
Unit
nC
nC
nC
Unit
nF
nF
nF
S
ns
ns
ns
ns
ns
ns
ns
µA
µA
nA
V
V
Ω