STE250NS10 STMicroelectronics, STE250NS10 Datasheet - Page 9

• Manufacturer Part Number: STE250NS10
• Description: MOSFET N-CH 100V 220A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE250NS10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 125A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 220A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 900nC @ 10V
• Input Capacitance (ciss) @ Vds: 31000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 220 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3167-5

STE250NS10
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 8220 Rev 3
Package mechanical data
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®