STE250NS10 STMicroelectronics, STE250NS10 Datasheet - Page 8

• Manufacturer Part Number: STE250NS10
• Description: MOSFET N-CH 100V 220A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE250NS10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 125A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 220A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 900nC @ 10V
• Input Capacitance (ciss) @ Vds: 31000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 220 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3167-5

Test circuits
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Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 8220 Rev 3
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
Figure 19. Switching time waveform
circuit
STE250NS10