STE70NM50 STMicroelectronics, STE70NM50 Datasheet
STE70NM50
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STE70NM50 Summary of contents
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... September 2002 N-CHANNEL 500V - 0.045 - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET R I DS(on) D < 0. Parameter = 25° 100° 25°C C (1)I SD STE70NM50 ISOTOP INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 280 600 –65 to 150 150 60A, di/dt 400A/µ (BR)DSS j Unit ...
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... STE70NM50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage ...
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... 60A, di/dt = 100A/µ 100 25° (see test circuit, Figure 60A, di/dt = 100A/µ 100 150° (see test circuit, Figure 5) Test Conditions Igs=± 1mA (Open Drain) STE70NM50 Min. Typ. Max. Unit 190 266 Min. Typ. Max. Unit 108 ns Min ...
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... STE70NM50 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...
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... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STE70NM50 5/8 ...
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... STE70NM50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... STE70NM50 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...
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... STE70NM50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...