STE70NM50 STMicroelectronics, STE70NM50 Datasheet - Page 2

• Manufacturer Part Number: STE70NM50
• Description: MOSFET N-CH 500V 70A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE70NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 70 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3172-5

STE70NM50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
DSS
R
AR
T
oss
AS
rss
iss
G
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
CASE
DD
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
D
D
V
= 35 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 30A
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= V
> I
= ± 20V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 30A
GS
= 250µA
DS(on)max,
Max
Max
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
3
300
0.2
30
Max Value
0.045
7500
Typ.
Typ.
Typ.
1.4
980
200
1.5
30
35
4
Max.
Max.
Max.
± 10
0.05
100
10
5
°C/W
°C/W
Unit
Unit
Unit
Unit
µA
µA
µA
°C
pF
pF
pF
A
V
V
S
J