STE70NM60 STMicroelectronics, STE70NM60 Datasheet - Page 3

• Manufacturer Part Number: STE70NM60
• Description: MOSFET N-CH 600V 70A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE70NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single Dual Source
• Resistance Drain-source Rds (on): 0.055 Ohms
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 70 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3173-5

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
V
R
V
SDM
(BR)DSS
g
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
R
Q
Q
SD
t
oss
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
G
f
g
rr
(1)
(2)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
V
D
D
SD
SD
DS
DS
GS
DS
GS
DS
DD
DD
GS
DD
DD
G
G
DS
= 250 µA, V
= 30 A
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 60 A, V
= 60 A, di/dt = 100 A/µs,
= Max Rating
= Max Rating, T
= V
= I
= ± 20V
= 10 V, I
= 300 V, I
= 470 V, I
= 10 V
= 400 V, I
= 30 V, T
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
D(on)
Test Conditions
Test Conditions
GS
, I
V
V
x R
D
GS
D
GS
GS
j
D
D
D
GS
= 250 µA
= 30 A
= 150°C
DS(on)max,
= 10 V
= 30 A
= 60 A,
= 60 A,
= 10 V
= 0
= 0
C
= 125°C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
3
Typ.
Typ.
44.5
Typ.
0.050
178
600
130
105
7300
2000
Typ.
Typ.
55
95
95
14
48
76
1.8
35
40
4
Max.
Max.
Max.
STE70NM60
0.055
266
240
Max.
Max.
1.5
60
100
±10
10
5
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
µA
µA
µA
pF
pF
pF
A
A
V
A
V
V
S
3/8