STE70NM60 STMicroelectronics, STE70NM60 Datasheet - Page 3

MOSFET N-CH 600V 70A ISOTOP

STE70NM60

Manufacturer Part Number
STE70NM60
Description
MOSFET N-CH 600V 70A ISOTOP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STE70NM60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
7300pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single Dual Source
Resistance Drain-source Rds (on)
0.055 Ohms
Forward Transconductance Gfs (max / Min)
35 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3173-5

Available stocks

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Manufacturer
Quantity
Price
Part Number:
STE70NM60
Manufacturer:
VICOR
Quantity:
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Part Number:
STE70NM60
Manufacturer:
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Quantity:
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ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
V
R
V
SDM
(BR)DSS
g
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
R
Q
Q
SD
t
oss
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
G
f
g
rr
(1)
(2)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
V
D
D
SD
SD
DS
DS
GS
DS
GS
DS
DD
DD
GS
DD
DD
G
G
DS
= 250 µA, V
= 30 A
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 60 A, V
= 60 A, di/dt = 100 A/µs,
= Max Rating
= Max Rating, T
= V
= I
= ± 20V
= 10 V, I
= 300 V, I
= 470 V, I
= 10 V
= 400 V, I
= 30 V, T
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
D(on)
Test Conditions
Test Conditions
GS
, I
V
V
x R
D
GS
D
GS
GS
j
D
D
D
GS
= 250 µA
= 30 A
= 150°C
DS(on)max,
= 10 V
= 30 A
= 60 A,
= 60 A,
= 10 V
= 0
= 0
C
= 125°C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
3
Typ.
Typ.
44.5
Typ.
0.050
178
600
130
105
7300
2000
Typ.
Typ.
55
95
95
14
48
76
1.8
35
40
4
Max.
Max.
Max.
STE70NM60
0.055
266
240
Max.
Max.
1.5
60
100
±10
10
5
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
µA
µA
µA
pF
pF
pF
A
A
V
A
V
V
S
3/8

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