MOSFET N-CH 100V 180A ISOTOP

STE180NE10

Manufacturer Part NumberSTE180NE10
DescriptionMOSFET N-CH 100V 180A ISOTOP
ManufacturerSTMicroelectronics
SeriesSTripFET™
STE180NE10 datasheet
 


Specifications of STE180NE10

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs6 Ohm @ 40A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C180AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs795nC @ 10VInput Capacitance (ciss) @ Vds21000pF @ 25V
Power - Max360WMounting TypeChassis Mount
Package / CaseISOTOPLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-3166-5  
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General features
Type
V
DSS
STE180NE10
100V
100% avalanche tested
Low intrinsic capacitance
Gate charge minimized
Reduced voltage spread
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
Switching application
Order codes
Part number
STE180NE10
February 2007
N-channel 100V - 4.5mΩ - 180A - ISOTOP
STripFET™ Power MOSFET
R
I
DS(on)
D
<6mΩ
180A
Internal schematic diagram
Marking
E180NE10
Rev 6
STE180NE10
ISOTOP
Package
Packaging
ISOTOP
Tube
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www.st.com
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STE180NE10 Summary of contents

  • Page 1

    ... Applications ■ Switching application Order codes Part number STE180NE10 February 2007 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET R I DS(on) D <6mΩ 180A Internal schematic diagram Marking E180NE10 Rev 6 STE180NE10 ISOTOP Package Packaging ISOTOP Tube 1/12 www.st.com 12 ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STE180NE10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STE180NE10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous 100°C C (1) I Drain current (pulsed Total dissipation at T TOT Derating factor V Insulation withstand voltage (AC-RMS) ISO T Operating junction temperature ...

  • Page 4

    ... D(on) DS(on)max I = 25V 1MHz 90V 4.7Ω (see Figure 12 80V 10V (see Figure 13) STE180NE10 Min. Typ. Max. =0 100 4 40 ±400 = 250µ 40A 4.5 6 Min. Typ. Max 2.5 0.9 100 = 490A 600 = 10V 430 440 = 180A, 585 795 = 4.7Ω 120 ...

  • Page 5

    ... STE180NE10 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

  • Page 6

    ... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STE180NE10 ...

  • Page 7

    ... STE180NE10 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/12 ...

  • Page 8

    ... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform STE180NE10 ...

  • Page 9

    ... STE180NE10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

  • Page 10

    ... STE180NE10 inch MIN. TYP. MAX. 0.466 0.480 0.350 0.358 0.076 0.080 0.029 0.033 0.496 0.503 0.990 1.003 1.240 1.248 0.157 0.161 0.169 0.586 0.594 1.185 1 ...

  • Page 11

    ... STE180NE10 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 20-Feb-2007 Revision 4 Complete document 5 New template, no content change 6 Typo mistake on page 1 Revision history Changes 11/12 ...

  • Page 12

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STE180NE10 ...