MOSFET N-CH 100V 180A ISOTOP

STE180NE10

Manufacturer Part NumberSTE180NE10
DescriptionMOSFET N-CH 100V 180A ISOTOP
ManufacturerSTMicroelectronics
SeriesSTripFET™
STE180NE10 datasheet
 

Specifications of STE180NE10

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs6 Ohm @ 40A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C180AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs795nC @ 10VInput Capacitance (ciss) @ Vds21000pF @ 25V
Power - Max360WMounting TypeChassis Mount
Package / CaseISOTOPLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-3166-5  
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Electrical characteristics
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
On/off states
Symbol
Drain-source
V
(BR)DSS
breakdown voltage
Zero gate voltage
I
DSS
drain current (V
Gate-body leakage
I
GSS
current (V
V
Gate threshold voltage
GS(th)
Static drain-source on
R
DS(on)
resistance
Table 5.
Dynamic
Symbol
Forward
(1)
g
fs
transconductance
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer
C
rss
capacitance
t
Turn-on delay time
d(on)
t
Rise time
r
t
Turn-off delay time
d(off)
t
Fall time
f
Q
Total gate charge
g
Q
Gate-source charge
gs
Q
Gate-drain charge
gd
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/12
Parameter
Test conditions
I
=1mA, V
D
GS
V
= max rating
DS
V
= max rating,
DS
= 0)
GS
T
= 125°C
C
V
= ± 20V
GS
= 0)
DS
V
= V
, I
DS
GS
D
V
= 10V, I
GS
D
Parameter
Test conditions
V
>I
xR
DS
D(on)
DS(on)max
I
=80 A
D
V
= 25V, f = 1MHz,
DS
V
= 0
GS
V
= 90V, I
DD
D
R
= 4.7Ω V
G
GS
(see
Figure
12)
V
= 80V, I
DD
D
V
= 10V, R
GS
G
(see
Figure
13)
STE180NE10
Min.
Typ.
Max.
=0
100
4
40
±400
= 250µA
2
3
4
= 40A
4.5
6
Min.
Typ.
Max.
30
21
2.5
0.9
100
= 490A
600
= 10V
430
440
= 180A,
585
795
= 4.7Ω
120
210
Unit
V
µA
µA
nA
V
Unit
S
nF
nF
nF
ns
ns
ns
ns
nC
nC
nC