STE180NE10 STMicroelectronics, STE180NE10 Datasheet - Page 4

• Manufacturer Part Number: STE180NE10
• Description: MOSFET N-CH 100V 180A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE180NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 795nC @ 10V
• Input Capacitance (ciss) @ Vds: 21000pF @ 25V
• Power - Max: 360W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3166-5

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
rss
iss
gd
r
gs
f
g
(1)
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
I
V
V
V
R
(see
V
V
(see
D
D
C
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
G
=80 A
=1mA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
>I
= max rating
= max rating,
= ± 20V
= V
= 10V, I
= 25V, f = 1MHz,
= 0
= 10V, R
= 90V, I
= 80V, I
Figure
Figure
D(on)
GS
xR
, I
GS
12)
13)
D
GS
D
D
D
DS(on)max
G
= 40A
= 490A
= 180A,
=0
= 250µA
= 4.7Ω
= 10V
Min.
Min.
100
30
2
Typ.
Typ.
100
600
430
440
585
120
210
4.5
2.5
0.9
21
3
Max.
Max.
±400
STE180NE10
795
40
4
4
6
Unit
Unit
nC
nC
nC
nF
nF
nF
µA
µA
nA
ns
ns
ns
ns
S
V
V
Ω