MCP4441T-503E/ST Microchip Technology, MCP4441T-503E/ST Datasheet - Page 42

• Manufacturer Part Number: MCP4441T-503E/ST
• Description: IC DGTL POT 129TAPS QUAD 20TSSOP
• Manufacturer: Microchip Technology

Specifications of MCP4441T-503E/ST

• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Temperature Coefficient: 150 ppm/°C Typical
• Taps: 129
• Resistance (ohms): 50K
• Number Of Circuits: 4
• Memory Type: Non-Volatile
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Pots: Quad
• Taps Per Pot: 129
• Resistance: 50 KOhms
• Wiper Memory: Non Volatile
• Buffered Wiper: Buffered
• Digital Interface: I2C
• Operating Supply Voltage: 2.7 V to 5.5 V
• Supply Current: 600 uA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Description/function: Quad I2C Digital POT with Nonvolatile Memory
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MCP444X/446X
4.2
The device memory has 16 locations that are 9-bit wide
(16x9 bits). This memory space contains both volatile
and nonvolatile locations (see
TABLE 4-1:
DS22265A-page 42
Note 1:
Address
0Ch
0Dh
0Ah
0Bh
0Eh
0Fh
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
2:
Memory Map
Volatile Wiper 0
Volatile Wiper 1
Nonvolatile Wiper 0
Nonvolatile Wiper 1
Volatile
TCON0 Register
Status Register
Volatile Wiper 2
Volatile Wiper 3
Nonvolatile Wiper 2
Nonvolatile Wiper 3
Volatile
TCON1 Register
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
When an EEPROM write is active, these are invalid commands and will generate an error condition. The
user should use a read of the Status register to determine when the write cycle has completed. To exit the
error condition, the user must take the HVC pin to the V
V
This command on this address will generate an error condition. To exit the error condition, the user must
take the HVC pin to the V
IHH
).
Function
MEMORY MAP AND THE SUPPORTED COMMANDS
Table
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
Memory
Type
RAM
RAM
RAM
RAM
RAM
RAM
RAM
4-1).
IH
level and then back to the active state (V
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Allowed Commands
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write,
Read, Write,
Read, Write,
Read, Write,
Read, Write
Read, Write
Read
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
IH
Write, Increment, Decrement
level and then back to the active state (V
Disallowed Commands
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
Increment, Decrement
IL
or V
—
—
—
—
IHH
© 2010 Microchip Technology Inc.
).
(2)
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
Initialization
Factory
000h
000h
000h
000h
000h
—
—
—
—
—
—
—
IL
80h
40h
80h
40h
80h
40h
80h
40h
or