PEMB9,115 NXP Semiconductors, PEMB9,115 Datasheet - Page 2

Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7

PEMB9,115

Manufacturer Part Number
PEMB9,115
Description
Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PEMB9,115

Configuration
Dual
Transistor Polarity
PNP/PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.2
Mounting Style
SMD/SMT
Package / Case
SOT-666
Collector- Emitter Voltage Vceo Max
- 50 V
Peak Dc Collector Current
- 100 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 10 V
Minimum Operating Temperature
- 65 C
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Frequency - Transition
-
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057047115 PEMB9 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMB9,115
Manufacturer:
NXP Semiconductors
Quantity:
13 200
Part Number:
PEMB9,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral drivers
• Replacement of general purpose transistors in digital
• Control of IC inputs.
DESCRIPTION
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2003 Oct 03
PNP/PNP resistor-equipped transistors (see “Simplified
PEMB9
PUMB9
PEMB9
PUMB9
TYPE NUMBER
TYPE NUMBER
applications
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
* = t: Made in Malaysia.
* = W: Made in China.
PHILIPS
SOT666
SOT363
Top view
PACKAGE
6
1
SIMPLIFIED OUTLINE AND SYMBOL
5
2
SC-88
EIAJ
3
4
MAM477
MARKING CODE
2
TR1
QUICK REFERENCE DATA
V
I
TR1
TR2
R1
R2
SYMBOL
O
6
1
CEO
B*9
Z6
R1
R2
5
2
R2
R1
collector-emitter
voltage
output current (DC)
PNP
PNP
bias resistor
bias resistor
(1)
PARAMETER
4
3
TR2
COMPLEMENT
NPN/PNP
PUMD9
PEMD9
PEMB9; PUMB9
PIN
1
2
3
4
5
6
10
47
TYP.
Product data sheet
PINNING
COMPLEMENT
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
DESCRIPTION
−50
−100
NPN/NPN
MAX.
PEMH9
PUMH9
V
mA
UNIT

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