PEMB9,115 NXP Semiconductors, PEMB9,115 Datasheet - Page 4

• Manufacturer Part Number: PEMB9,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PEMB9,115

• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.2
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Collector- Emitter Voltage Vceo Max: - 50 V
• Peak Dc Collector Current: - 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 10 V
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057047115 PEMB9 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Oct 03
Per transistor
R
Per device
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
th j-a
th j-a
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
V
V
I
f = 1 MHz
C
E
CB
CE
CE
EB
CE
CE
CE
= −5 mA; I
= i
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
= −5 V; I
= −0.3 V; I
e
= 0; V
4
CONDITIONS
T
note 1
notes 1 and 2
T
note 1
note 1
CB
C
C
B
C
amb
amb
E
B
B
= 0
= −0.25 mA
= −5 mA
= −100 μA
C
= −10 V;
CONDITIONS
= 0
= 0
= 0; T
= −1 mA
≤ 25 °C
≤ 25 °C
j
= 150 °C
−
−
−
−
100
−
−
−1.4
7
3.7
−
MIN.
VALUE
PEMB9; PUMB9
625
625
416
416
−
−
−
−
−
−
−0.7
−0.8
10
4.7
−
TYP.
Product data sheet
−100
−1
−50
−150
−
−100
−0.5
−
13
5.7
3
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT