PEMB9,115 NXP Semiconductors, PEMB9,115 Datasheet - Page 6

• Manufacturer Part Number: PEMB9,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PEMB9,115

• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.2
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Collector- Emitter Voltage Vceo Max: - 50 V
• Peak Dc Collector Current: - 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 10 V
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057047115 PEMB9 T/R

NXP Semiconductors
2003 Oct 03
Plastic surface mounted package; 6 leads
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
6
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
PEMB9; PUMB9
0.1
A
y
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
A
SOT363