PEMB9,115 NXP Semiconductors, PEMB9,115 Datasheet - Page 3

Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7

PEMB9,115

Manufacturer Part Number
PEMB9,115
Description
Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PEMB9,115

Configuration
Dual
Transistor Polarity
PNP/PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.2
Mounting Style
SMD/SMT
Package / Case
SOT-666
Collector- Emitter Voltage Vceo Max
- 50 V
Peak Dc Collector Current
- 100 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 10 V
Minimum Operating Temperature
- 65 C
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Frequency - Transition
-
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057047115 PEMB9 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMB9,115
Manufacturer:
NXP Semiconductors
Quantity:
13 200
Part Number:
PEMB9,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 03
PEMB9
PUMB9
Per transistor
V
V
V
V
I
I
P
T
T
T
Per device
P
SYMBOL
O
CM
TYPE NUMBER
stg
j
amb
CBO
CEO
EBO
I
tot
tot
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
SOT363
SOT666
SOT363
SOT666
PARAMETER
NAME
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
amb
amb
≤ 25 °C
≤ 25 °C
3
CONDITIONS
DESCRIPTION
PACKAGE
−65
−65
MIN.
PEMB9; PUMB9
−50
−50
−10
+6
−40
−100
−100
200
200
+150
150
+150
300
300
MAX.
Product data sheet
SOT666
SOT363
VERSION
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT

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