PEMB9,115 NXP Semiconductors, PEMB9,115 Datasheet - Page 5

• Manufacturer Part Number: PEMB9,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PEMB9,115

• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.2
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Collector- Emitter Voltage Vceo Max: - 50 V
• Peak Dc Collector Current: - 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 10 V
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057047115 PEMB9 T/R

NXP Semiconductors
PACKAGE OUTLINES
2003 Oct 03
Plastic surface mounted package; 6 leads
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
3
REFERENCES
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
scale
EIAJ
5
1
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PEMB9; PUMB9
L p
Product data sheet
c
X
ISSUE DATE
01-01-04
01-08-27
SOT666