BFG97,135 NXP Semiconductors, BFG97,135 Datasheet - Page 3

• Manufacturer Part Number: BFG97,135
• Description: TRANS NPN 15V 100MA 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,135

• Package / Case: TO-261-4, TO-261AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. d
3. d
4.
5. I
September 1995
R
I
h
f
C
C
C
G
V
d
j
CBO
T
FE
2
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
o
th j-s
c
e
re
NPN 5 GHz wideband transistor
UM
V
V
V
measured at f
V
V
V
measured at f
V
V
I
C
im
im
C
s
p
q
r
p
q
r
p
p
UM
= 70 mA; V
= V
= V
is the temperature at the soldering point of the collector tab.
= V
= V
= V
= V
= V
= V
= 70 mA; V
= 60 dB (DIN 45004B); I
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
o
o
o
q
q
6 dB; f
6 dB; f
at d
6 dB; f
at d
6 dB; f
= V
= V
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
output voltage
second order intermodulation
distortion
o
o
im
im
= 50 dBmV; f
= 50 dBmV; f
CE
(pqr)
(pqr)
= 60 dB;
= 60 dB;
CE
q
q
p
p
= 10 V; R
= 453.25 MHz; f
= 803.25 MHz; f
= 10 V; R
= 445.25 MHz;
= 795.25 MHz;
= 443.25 MHz.
= 793.25 MHz.
PARAMETER
PARAMETER
(pq)
L
(pq)
L
= 75 ; T
= 75 ; T
C
C
= 450 MHz; f
= 810 MHz; f
= 70 mA; V
= 70 mA; V
r
r
G
= 455.25 MHz;
= 805.25 MHz;
UM
amb
amb
=
= 25 C;
= 25 C;
10 log
CE
CE
p
p
I
I
I
f = 500 MHz; T
I
I
I
I
f = 500 MHz; T
I
f = 800 MHz; T
note 2
note 3
note 4
note 5
= 10 V; R
= 10 V; R
= 50 MHz; f
= 250 MHz; f
E
C
C
E
C
C
C
C
= 0; V
= i
= 70 mA; V
= 70 mA; V
= i
= 0; V
= 70 mA; V
= 70 mA; V
up to T
--------------------------------------------------------- - dB.

e
c
1
= 0; V
= 0; V
–
CB
CE
S
L
L
3
12
11
s
= 75 ; T
= 75 ; T
= 10 V
= 10 V; f = 1 MHz
q
CONDITIONS
CB
= 125 C (note 1)
EB
is zero and
S
q
2
= 400 MHz.
CE
CE
CE
CE
 1
21
= 560 MHz.
CONDITIONS
amb
amb
amb
= 10 V; f = 1 MHz

= 0.5 V; f = 1 MHz
= 10 V
= 10 V;
= 10 V;
= 10 V;
2
–
= 25 C
= 25 C
= 25 C
S
amb
amb
22
2
= 25 C
= 25 C


25










MIN.
THERMAL RESISTANCE

80
5.5
1.5
6.5
1
16
12
750
700
56
53
TYP. MAX.
Product specification
50 K/W
100











BFG97
nA
GHz
pF
pF
pF
dB
dB
mV
mV
dB
dB
UNIT