BFG97,135 NXP Semiconductors, BFG97,135 Datasheet - Page 7

• Manufacturer Part Number: BFG97,135
• Description: TRANS NPN 15V 100MA 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,135

• Package / Case: TO-261-4, TO-261AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
(dB)
(dB)
d im
V
T
Fig.8
d 2
V
T
Fig.10 Second order intermodulation distortion as
amb
amb
CE
CE
= 10 V; V
= 10 V; V
45
50
55
60
65
70
45
50
55
60
65
70
= 25 C.
= 25 C.
20
20
Intermodulation distortion as a function of
collector current.
a function of collector current.
o
o
= 750 mV; f
= 50 dBmV; f
40
40
(pqr)
60
60
(pq)
= 443.25 MHz;
= 450 MHz;
80
80
100
100
I
I
C
C
MBB799
MBB800
(mA)
(mA)
120
120
7
handbook, halfpage
handbook, halfpage
(dB)
(dB)
d im
d 2
V
T
Fig.9
V
T
Fig.11 Second order intermodulation distortion as
CE
amb
CE
amb
= 10 V; V
= 10 V; V
45
50
55
60
65
70
45
50
55
60
65
70
= 25 C.
= 25 C.
20
20
Intermodulation distortion as a function of
collector current.
a function of collector current.
o
o
= 700 mV; f
= 50 dBmV; f
40
40
(pqr)
60
60
(pq)
= 793.25 MHz;
= 810 MHz;
80
80
Product specification
100
100
I
I
C
C
MBB801
MBB796
(mA)
BFG97
(mA)
120
120