BFG97,135 NXP Semiconductors, BFG97,135 Datasheet - Page 6

• Manufacturer Part Number: BFG97,135
• Description: TRANS NPN 15V 100MA 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,135

• Package / Case: TO-261-4, TO-261AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
P tot
NPN 5 GHz wideband transistor
(W)
I
Fig.6
E
(pF)
C re
= 0; f = 1 MHz; T
1.2
1.0
0.8
0.6
0.4
0.2
0
3
2
1
0
0
0
Feedback capacitance as a function of
collector-emitter voltage.
Fig.4 Power derating curve.
j
50
= 25 C.
100
10
V
CE
150
(V)
T
s
MBB798
MBB797
( C)
o
200
20
6
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.5
V
Fig.7
h FE
CE
CE
T f
120
= 10 V; T
= 10 V; f = 500 MHz; T
80
40
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
40
40
j
= 25 C.
80
80
Product specification
I
I
C
C
(mA)
(mA)
MBB774
MBB773
BFG97
120
120