PIC18F4420T-I/PT Microchip Technology, PIC18F4420T-I/PT Datasheet - Page 19

• Manufacturer Part Number: PIC18F4420T-I/PT
• Description: IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,TQFP,44PIN,PLASTIC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F4420T-I/PT

• Rohs Compliant: YES
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 13x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TQFP, 44-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.2.1
The previous programming example assumed that the
device had been Bulk Erased prior to programming
(see
It may be the case, however, that the user wishes to
modify only a section of an already programmed
device.
TABLE 3-6:
 2010 Microchip Technology Inc.
Step 1: Direct access to code memory.
Step 2: Read and modify code memory (see
Step 3: Set the Table Pointer for the block to be erased.
Step 4: Enable memory writes and set up an erase.
Step 5: Initiate erase.
Step 6: Load write buffer. The correct bytes will be selected based on the Table Pointer.
To continue modifying data, repeat Steps 2 through 6, where the Address Pointer is incremented by the appropriate number of bytes
(see
the erase buffer.
Step 7: Disable writes.
Command
Section 3.1.1 “High-Voltage ICSP Bulk
Table
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
1101
1111
0000
0000
4-Bit
.
.
.
3-4) at each iteration of the loop. The write cycle must be repeated enough times to completely rewrite the contents of
MODIFYING CODE MEMORY
8E A6
9C A6
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
84 A6
88 A6
82 A6
00 00
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
<MSB><LSB>
<MSB><LSB>
00 00
94 A6
MODIFYING CODE MEMORY
Data Payload
.
.
.
Section 4.1 “Read Code Memory, ID Locations and Configuration
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BSF
NOP - hold PGC high for time P9 and low for time P10.
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
Write 2 bytes and post-increment address by 2.
Repeat as many times as necessary to fill the write buffer
Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
BCF
Erase”).
PIC18F2XXX/4XXX FAMILY
EECON1, EEPGD
EECON1, CFGS
<Addr[21:16]>
TBLPTRU
<Addr[8:15]>
TBLPTRH
<Addr[7:0]>
TBLPTRL
EECON1, WREN
EECON1, FREE
EECON1, WR
<Addr[21:16]>
TBLPTRU
<Addr[8:15]>
TBLPTRH
<Addr[7:0]>
TBLPTRL
EECON1, WREN
The appropriate number of bytes required for the erase
buffer must be read out of code memory (as described
in
Locations”) and buffered. Modifications can be made
on this buffer. Then, the block of code memory that was
read out must be erased and rewritten with the
modified data.
The WREN bit must be set if the WR bit in EECON1 is
used to initiate a write sequence.
Section 4.2 “Verify Code Memory and ID
Core Instruction
DS39622L-page 19
Bits”).