PIC18F4420T-I/PT Microchip Technology, PIC18F4420T-I/PT Datasheet - Page 42

IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,TQFP,44PIN,PLASTIC

PIC18F4420T-I/PT

Manufacturer Part Number
PIC18F4420T-I/PT
Description
IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,TQFP,44PIN,PLASTIC
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18F4420T-I/PT

Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F4420T-I/PT
Manufacturer:
MICROCHIP
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Part Number:
PIC18F4420T-I/PT
Manufacturer:
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6.0
DS39622L-page 42
Standard Operating Conditions
Operating Temperature: 25C is recommended
Param
D110
D110A V
D111
D112
D113
D031
D041
D080
D090
D012
P1
P2
P2A
P2B
P3
P4
P5
P5A
P6
P9
P10
P11
Note 1:
No.
2:
3:
V
V
I
I
V
V
V
V
C
T
T
T
T
T
T
T
T
T
T
T
T
PP
DDP
AC/DC CHARACTERISTICS TIMING REQUIREMENTS 
FOR PROGRAM/VERIFY TEST MODE
Sym
R
PGC
PGCL
PGCH
SET
HLD
DLY
DLY
DLY
DLY
DLY
DLY
IHH
IHL
DD
IL
IH
OL
OH
IO
Do not allow excess time when transitioning MCLR between V
executions to occur. The maximum transition time is:
where T
specific values, refer to the Electrical Characteristics section of the device data sheet for the particular device.
When ICPRT = 1, this specification also applies to ICV
At 0°C-50°C.
1
1 Input Data Setup Time to Serial Clock 
1 Delay Between 4-Bit Command and Command
2 Delay Between Last PGC  of Command Byte to
5 PGC High Time (minimum programming time)
6 PGC Low Time After Programming
7 Delay to Allow Self-Timed Data Write or 
1 Input Data Hold Time from PGC
A
1 T
2 ms (for HS/PLL mode only) + 1.5 s (for EC mode only)
High-Voltage Programming Voltage on 
MCLR/V
Low-Voltage Programming Voltage on 
MCLR/V
Supply Voltage During Programming
Programming Current on MCLR/V
Supply Current During Programming
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Capacitive Loading on I/O pin (PGD)
MCLR/V
Program/Verify mode
Serial Clock (PGC) Period
Serial Clock (PGC) Low Time
Serial Clock (PGC) High Time
Operand
Delay Between 4-Bit Command Operand and
Next 4-Bit Command
First PGC  of Read of Data Word
(high-voltage discharge time)
Bulk Erase to Occur
CY
CY
+ T
is the instruction cycle time, T
PWRT
PP
PP
PP
/RE3
/RE3
/RE3 Rise Time to Enter 
(if enabled) + 1024 T
Characteristic
OSC
PP
PWRT
/RE3
(for LP, HS, HS/PLL and XT modes only) + 
is the Power-up Timer period and T
PP
V
V
.
0.8 V
DD
DD
2.00
2.00
Min
V
100
400
400
100
3.0
40
40
15
15
40
40
20
1
1
5
SS
+ 4.0
– 0.7
IL
DD
and V
0.2 V
Max
12.5
5.50
5.50
5.50
IHH
V
300
0.6
1.0
10
50
DD
. This can cause spurious program
DD
Units
mA
ms
ms
A
pF
s
ns
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
 2010 Microchip Technology Inc.
V
V
V
V
V
V
V
V
OSC
is the oscillator period. For
(Note 2)
(Note 2)
Externally timed,
Row Erases and all writes
Self-timed,
Bulk Erases only (Note 3)
(Note 2)
I
I
To meet AC specifications
(Notes 1, 2)
V
V
V
V
V
V
Externally timed
OL
OH
DD
DD
DD
DD
DD
DD
= 8.5 mA @ 4.5V
= -3.0 mA @ 4.5V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
Conditions

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