HGT4E20N60A4DS Fairchild Semiconductor
HGT4E20N60A4DS
Manufacturer Part Number
HGT4E20N60A4DS
Description
IGBT Transistors TO-268
Manufacturer
Fairchild Semiconductor
Specifications of HGT4E20N60A4DS
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant