AM29LV800DB-70ED Spansion Inc., AM29LV800DB-70ED Datasheet - Page 12

• Manufacturer Part Number: AM29LV800DB-70ED
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.
• Series: AM29r

Specifications of AM29LV800DB-70ED

• Memory Size: 8Mbit
• Package/case: 48-TSOP
• Supply Voltage Max: 3V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Access Time, Tacc: 70nS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device Bus Operations
This section describes the requirements and use
of the device bus operations, which are initiated
through the internal command register. The
command register itself does not occupy any
addressable memory location. The register is
composed of latches that store the commands,
along with the address and data information
needed to execute the command. The contents
Legend:
L = Logic Low = V
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = V
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See
Word/Byte Configuration
The BYTE# pin controls whether the device data
I/O pins DQ15–DQ0 operate in the byte or word
configuration. If the BYTE# pin is set at logic ‘1’,
the device is in word configuration, DQ15–DQ0
are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is
in byte configuration, and only data I/O pins
DQ0–DQ7 are active and controlled by CE# and
O E # . T h e d a t a I / O p i n s D Q 8 – D Q 1 4 a r e
tri-stated, and the DQ15 pin is used as an input
for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system
must drive the CE# and OE# pins to V
the power control and selects the device. OE# is
the output control and gates array data to the
output pins. WE# should remain at V
10
Read
Write
Standby
Output Disable
Reset
Sector Protect (Note 2)
Sector Unprotect (Note 2)
Temporary Sector Unprotect
the “Sector Protection/Unprotection” section.
Operation
IL
, H = Logic High = V
Table 1. Am29LV800D Device Bus Operations
V
0.3 V
CE#
CC
X
X
L
L
L
L
L
±
IH
, V
OE
#
H
H
H
H
X
X
X
ID
L
= 12.0 ± 0.5 V, X = Don’t Care, A
P R E L I M I N A R Y
IL
WE
#
H
X
H
X
X
. CE# is
L
L
L
IH
. The
Am29LV800D
RESET
V
0.3 V
V
V
V
CC
#
H
H
H
L
ID
ID
ID
IH
±
), A18:A-1 in byte mode (BYTE# = V
A6 = H, A1 = H,
A6 = L, A1 = H,
Sector Address,
Sector Address,
of the register serve as inputs to the internal
state machine. The state machine outputs
dictate the function of the device. Table 1 lists
the device bus operations, the inputs and
control levels they require, and the resulting
output. The following subsections describe each
of these operations in further detail.
BYTE# pin determines whether the device
outputs array data in words or bytes.
The internal state machine is set for reading
array data upon device power-up, or after a
hardware reset. This ensures that no spurious
alteration of the memory content occurs during
the power transition. No command is necessary
in this mode to obtain array data. Standard
microprocessor read cycles that assert valid
addresses on the device address inputs produce
valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See “Reading Array Data” for more information.
Refer to the AC Read Operations table for timing
specifications and to Figure 1 for the timing dia-
gram. I
sents the active current specification for reading
array data.
Addresses
(Note 1)
A0 = L
A0 = L
A
A
A
X
X
X
IN
IN
IN
CC1
IN
in the DC Characteristics table repre-
= Address In, D
Am29LV800D_00_A4_E January 21, 2005
High-Z High-Z
High-Z High-Z
High-Z High-Z
DQ0–
D
DQ7
D
D
D
D
OUT
IN
IN
IN
IN
= V
BYTE
D
D
D
IN
#
OUT
X
X
IN
IN
IH
= Data In, D
DQ8–DQ15
DQ8–DQ14 = High-
IL
).
Z, DQ15 = A-1
BYTE#
High-Z
High-Z
High-Z
High-Z
OUT
= V
X
X
= Data Out
IL