BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 4

• Manufacturer Part Number: BLS6G2731S-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731S-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 120W(Typ)
• Power Gain (typ)@vds: 13.5@32VdB
• Frequency (min): 2.7GHz
• Frequency (max): 3.1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 135@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 48%
• Mounting: Surface Mount
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS6G2731S-120,112

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 8.
The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
f
GHz
2.7
2.8
2.9
3.0
3.1
Fig 1.
Definition of transistor impedance
Typical impedance
DS
BLS6G2731-120; BLS6G2731S-120
= 32 V; I
Rev. 01 — 14 November 2008
Dq
= 100 mA; P
Z
3.4
3.8
4.7
6.3
8.8
S
j7.2
j5.9
j4.8
j4.1
j4.9
gate
Z
S
L
= 120 W; t
001aaf059
LDMOS S-band radar power transistor
Z
drain
L
p
= 100 s; = 10 %.
Z
4.6
3.8
3.0
2.3
1.8
L
j4.4
j4.6
j4.6
j4.3
j3.9
© NXP B.V. 2008. All rights reserved.
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