BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet

BLS6G2731S-120

Manufacturer Part Number

BLS6G2731S-120

Description

RF MOSFET Small Signal LDMOS TNS

Manufacturer

NXP Semiconductors

Datasheet

1.BLS6G2731S-120.pdf (12 pages)

Specifications of BLS6G2731S-120

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.135 Ohms

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

13 V

Continuous Drain Current

33 A

Maximum Operating Temperature

+ 225 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 65 C

Package / Case

SOT502B

Application

S-Band

Channel Type

Channel Mode

Enhancement

Drain Source Voltage (max)

60V

Output Power (max)

120W(Typ)

Power Gain (typ)@vds

13.5@32VdB

Frequency (min)

2.7GHz

Frequency (max)

3.1GHz

Package Type

LDMOST

Pin Count

Forward Transconductance (typ)

13S

Drain Source Resistance (max)

135@6.15Vmohm

Operating Temp Range

-65C to 225C

Drain Efficiency (typ)

48%

Mounting

Surface Mount

Mode Of Operation

Pulsed RF

Number Of Elements

Vswr (max)

Screening Level

Military

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BLS6G2731S-120,112

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BLS6G2731S-120

Manufacturer:

NXP

Quantity:

1 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BLS6G2731S-120

Manufacturer:

NXP

Quantity:

5 000

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1. Product proﬁle

CAUTION

1.1 General description

1.2 Features

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz

range.

Table 1.

Typical RF performance at T

production test circuit.

Mode of operation

pulsed RF

BLS6G2731-120;

BLS6G2731S-120

LDMOS S-band radar power transistor

Rev. 01 — 14 November 2008

Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage

of 32 V, an I

Easy power control

Integrated ESD protection

High ﬂexibility with respect to pulse formats

Excellent ruggedness

High efﬁciency

Excellent thermal stability

Designed for broadband operation (2.7 GHz to 3.1 GHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Output power = 120 W

Power gain = 13.5 dB

Efﬁciency = 48 %

Typical performance

of 100 mA, a t

case

(GHz)

2.7 to 3.1

= 25 C; t

of 100 s with of 10 %:

(V)

= 100 s; = 10 %; I

(W)

120

(dB)

13.5

= 100 mA; in a class-AB

(%)

Product data sheet

(ns)

Related parts for BLS6G2731S-120

BLS6G2731S-120 Summary of contents

Page 1

... BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 1. Product proﬁle 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Pinning Description drain gate source drain gate source Ordering information Package Name Description - ﬂanged LDMOST ceramic package; 2 mounting holes; 2 leads earless ﬂ ...

Page 3

... L(1dB droop(pulse BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Thermal characteristics Parameter transient thermal impedance from junction to mounting base Characteristics drain-source breakdown voltage V gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance V Application information = 100 s ...

Page 4

... Table 8. f GHz 2.7 2.8 2.9 3.0 3.1 Fig 1. 7.1 Ruggedness in class-AB operation The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Typical impedance Z S 3.4 j7 ...

Page 5

... 100 mA ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 4. Drain efﬁciency as a function of load power; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 001aaj091 G (dB) 120 160 P ( 300 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 3. Power gain as a function of load power; typical ...

Page 6

... G p (dB 2.65 2.75 2.85 2. 120 Fig 8. Power gain and drain efﬁciency as function of frequency; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 001aaj095 300 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 7. Load power as a function of input power; 001aaj097 (%) (dB 3.05 3.15 f (GHz) = 100 mA ...

Page 7

... C7, C8 multilayer ceramic chip capacitor 100 pF C12 electrolytic capacitor C13 multilayer ceramic chip capacitor SMD resistor BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 C7 C6 Value Rev. 01 — 14 November 2008 LDMOS S-band radar power transistor C13 C8 C9 C11 ...

Page 8

... UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... LDMOST RF S-band VSWR 11. Revision history Table 11. Revision history Document ID BLS6G2731-120_6G2731S-120_1 BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status 20081114 Product data sheet Rev. 01 — ...

Page 11

... For more information, please visit: For sales ofﬁce addresses, please send an email to: BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 [3] Deﬁnition This document contains data from the objective speciﬁcation for product development. This document contains data from the preliminary speciﬁcation. ...

Page 12

... Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 BLS6G2731-120; BLS6G2731S-120 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com LDMOS S-band radar power transistor All rights reserved ...

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