BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 5

• Manufacturer Part Number: BLS6G2731S-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731S-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 120W(Typ)
• Power Gain (typ)@vds: 13.5@32VdB
• Frequency (min): 2.7GHz
• Frequency (max): 3.1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 135@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 48%
• Mounting: Surface Mount
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS6G2731S-120,112

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 2. Power gain as a function of load power; typical
Fig 4. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
15
13
11
60
40
20
9
7
0
values
typical values
0
0
V
V
DS
DS
= 32 V; I
= 32 V; I
7.2 Graphs
40
40
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
(3)
(2)
80
80
(1)
(2)
(3)
p
p
= 300 s; = 10 %.
= 300 s; = 10 %.
120
120
BLS6G2731-120; BLS6G2731S-120
P
P
001aaj091
001aaj093
L
L
(W)
(W)
Rev. 01 — 14 November 2008
160
160
Fig 3. Power gain as a function of load power; typical
Fig 5. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
15
13
11
60
40
20
9
7
0
values
typical values
0
V
0
V
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-band radar power transistor
40
40
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
(3)
(2)
80
80
p
p
= 100 s;
= 100 s;
(1)
(2)
(3)
120
120
© NXP B.V. 2008. All rights reserved.
P
P
001aaj092
001aaj094
L
L
(W)
(W)
= 20 %.
= 20 %.
160
160
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