BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 9

RF MOSFET Small Signal LDMOS TNS

BLS6G2731S-120

Manufacturer Part Number
BLS6G2731S-120
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS6G2731S-120

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.135 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
33 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Application
S-Band
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
60V
Output Power (max)
120W(Typ)
Power Gain (typ)@vds
13.5@32VdB
Frequency (min)
2.7GHz
Frequency (max)
3.1GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13S
Drain Source Resistance (max)
135@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
48%
Mounting
Surface Mount
Mode Of Operation
Pulsed RF
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS6G2731S-120,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLS6G2731S-120
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLS6G2731S-120
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
Fig 12. Package outline SOT502B
BLS6G2731-120_6G2731S-120_1
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
BLS6G2731-120; BLS6G2731S-120
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
Rev. 01 — 14 November 2008
REFERENCES
E 1
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
LDMOS S-band radar power transistor
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
E
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
9 of 12

Related parts for BLS6G2731S-120