IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 11

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

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Fig. WF1 - Typ. Turn-off Loss Waveform
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Fig. WF.3 - Typ. Diode Recovery
@ Tj=125°C using Fig. CT.4
Peak
@ Tj=125°C using Fig. CT.4
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RR
0.50
Waveform
0.25
time (µS)
90% I
5% V
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5% I
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1.50
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Peak
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Fig. WF2 - Typ. Turn-On Loss Waveform
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IRGPS60B120KDP
@ Tj=125°C using Fig. CT.4
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Fig. WF.4 - Typ. S.C. Waveform
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@ TC=150°C using Fig. CT.3
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Eon Loss
Time (µs)
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90% test current
time (µS)
10% test current
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TEST CURRENT
4.50
CE
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5% V
CE
4.70
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