IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 3

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

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1000
100
0.1
10
Fig. 1 - Maximum DC Collector Current vs.
140
120
100
1
80
60
40
20
0
1
0
T
Fig. 3 - Forward SOA
C
20
= 25°C; T
Case Temperature
10
40
DC
60
LIMITED BY PACKAGE
V CE (V)
JS
100
T C (°C)
≤
80
150°C
100 120 140 160
1000
†
100 µs
1ms
10ms
2 µs
10 µs
10000
1000
100
700
600
500
400
300
200
100
10
1
Fig. 2 - Power Dissipation vs. Case
0
10
IRGPS60B120KDP
0
Fig. 4 - Reverse Bias SOA
T
J
Temperature
50
= 150°C; V
100
V CE (V)
T C (°C)
100
GE
1000
=15V
150
10000
3
200