IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 2

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

Electrical Characteristics @ T
IRGPS60B120KDP
Switching Characteristics @ T
SCSOA
RBSOA
V
∆V
V
V
∆
g
I
V
I
Qg
Qge
Q
E
E
E
E
E
E
t
t
t
t
C
C
C
Erec
t
I
CES
GES
d(on)
r
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
gc
ies
oes
res
2
(BR)CES
GE(th)
/
∆
/∆T
T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.40
––– 2.33 2.50
––– 2.50 2.75
––– 2.79
––– 3.04
––– 34.4
–––
–––
––– 1.82 2.10
––– 1.93 2.20
––– 1.96 2.20
––– 2.13 2.40
–––
––– 4783 5450
––– 8000 10320
–––
–––
––– 3346 –––
4.0
–––
–––
–––
––– 3214 4870
––– 5032 6890
––– 7457 8385
––– 12500 15275
–––
–––
–––
––– 4300 –––
–––
–––
–––
10
FULL SQUARE
–––
650 1350
––– ±100
340
165
366
395
160
180
-12
5.0
–––
40
72
32
45
50
–––
–––
––– mV/°C V
–––
500
510
248
400
–––
–––
–––
–––
3.1
3.5
6.0
–––
60
94
45
58
V/°C
µA
nA
V
V
S
V
nC
pF
µJ
µJ
ns
µJ
ns
µs
A
V
V
I
I
I
I
V
V
V
V
I
I
I
I
V
I
V
V
I
V
Ls = 150nH
diode reverse recovery.
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
R
T
V
R
T
V
V
Energy losses include "tail" and
C
C
C
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
CC
GE
GE
GE
GE
CC
CC
CC
CC
GE
G
G
= 50A
= 60A
= 50A, T
= 60A, T
= 50A
= 60A
= 50A, T
= 60A, T
= 60A
= 60A, V
= 15A, V
= 150°C, I
= 150°C, Vp =1200V
= 125°C
= 4.7Ω
= 4.7Ω
= V
= V
= 50V, I
= 0V, V
= 0V, V
= 0V, I
= 0V, I
= ±20V
= 600V
= 15V, R
= 0V
= 30V
= 1000V, V
= 900V, V
= 600V, I
= 15V
= 15V,R
= 15V,R
GE
GE
, I
, I
C
J
J
J
J
C
CC
CC
CE
CE
C
C
C
= 125°C
= 125°C
= 125°C
= 125°C
Conditions
Conditions
G
G
= 500µA
= 1.0mA, (25°C-125°C)
C
G
F
= 250µA
= 1.0mA, (25°C-125°C)
= 60A, PW=80µs
J
= 600V
= 600V
GE
= 4.7Ω, L =200µH
= 4.7Ω, Ls = 150nH
= 1200V
= 1200V, T
= 240A, Vp =1200V
= 60A, L =200µH
= 4.7Ω L =200µH
= 125°C
GE
= +15V to 0V,
= +15V to 0V
www.irf.com
T
T
J
J
V
= 25°C
= 125°C
GE
J
= 125°C
= 15V
CT4,WF3
Ref.Fig.
17,18,19
Ref.Fig.
14, 16
9,10
11 ,12
20, 21
13,15
WF1
WF2
WF4
5, 6
7, 9
10
11
CT4
CT3
CT1
WF1
WF2
CT2
CT4
23
22
4
8