IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 8

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

IRGPS60B120KDP
8
10000
1000
100
10
Fig. 22- Typ. Capacitance vs. V
0
V
20
GE
= 0V; f = 1MHz
40
V CE (V)
4000
3500
3000
2500
2000
1500
1000
500
0
0
60
Fig. 21 - Typical Diode E
Cies
Coes
Cres
100 Ω
22 Ω
47 Ω
4.7 Ω
20
CE
80
T
J
40
= 125°C
100
I F (A)
60
RR
Fig. 23 - Typical Gate Charge vs. V
16
14
12
10
8
6
4
2
0
vs. I
80
0
F
50
I
CE
Q G , Total Gate Charge (nC)
100
100 150 200 250 300 350 400
= 60A; L = 600µH
600V
www.irf.com
800V
GE