IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 7

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

www.irf.com
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
Fig. 19- Typical Diode I
0
Fig. 17 - Typical Diode I
0
R G = 22 Ω
V
I
CC
CE
20
= 60A; T
= 600V; V
T
R G = 100 Ω
R G = 47 Ω
R G = 4.7 Ω
R G = 22 Ω
J
500
= 125°C
R G = 47 Ω
di F /dt (A/µs)
40
R G = 100 Ω
J
I F (A)
= 125°C
GE
R G = 4.7 Ω
= 15V;
RR
60
vs. di
RR
1000
vs. I
F
80
/dt
F
1500
100
60
50
40
30
20
10
12
11
10
0
9
8
7
6
5
4
3
2
V
IRGPS60B120KDP
0
Fig. 18 - Typical Diode I
CC
0
Fig. 20 - Typical Diode Q
100 Ω
47 Ω
= 600V; V
T
22 Ω
J
= 125°C; I
500
50
GE
di F /dt (A/µs)
= 15V;T
R G ( Ω)
4.7 Ω
F
= 60A
J
1000
100
RR
= 125°C
vs. R
RR
90A
G
30A
60A
1500
7
150