IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 4

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

IRGPS60B120KDP
4
120
100
120
100
Fig. 7 - Typ. IGBT Output Characteristics
80
60
40
20
80
60
40
20
0
0
Fig. 5 - Typ. IGBT Output Characteristics
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
1
1
J
T
= 125°C; tp = 80µs
J
= -40°C; tp = 80µs
2
2
V CE (V)
V CE (V)
3
3
4
4
5
5
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
120
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
J
-40°C
25°C
125°C
1
= 25°C; tp = 80µs
tp = 80µs
1
2
V CE (V)
V F (V)
3
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2
4
3
5