IRGPS60B120KDP International Rectifier, IRGPS60B120KDP Datasheet - Page 6

• Manufacturer Part Number: IRGPS60B120KDP
• Description: IGBT W/DIODE 1200V 105A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS60B120KDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS60B120KDP

IRGPS60B120KDP
6
12000
10000
25000
20000
15000
10000
5000
8000
6000
4000
2000
0
0
Fig. 15 - Typ. Energy Loss vs. R
T
T
0
J
Fig. 13 - Typ. Energy Loss vs. I
0
J
= 125°C; L=200µH; V
= 125°C; L=200µH; V
I
CE
R
20
G
= 60A; V
= 4.7Ω; V
50
E OFF
E ON
40
R G ( Ω )
I C (A)
GE
GE
= 15V
E OFF
= 15V
60
CE
E ON
CE
100
= 600V
= 600V
80
G
C
100
150
1000
10000
100
1000
10
100
10
20
Fig. 16 - Typ. Switching Time vs. R
T
0
Fig. 14 - Typ. Switching Time vs. I
T
J
J
= 125°C; L=200µH; V
= 125°C; L=200µH; V
I
R
CE
40
G
= 60A; V
= 4.7Ω; V
50
td ON
I C (A)
td OFF
t F
R G ( Ω )
t R
60
GE
GE
= 15V
= 15V
CE
100
CE
www.irf.com
= 600V
80
= 600V
td ON
td OFF
t R
t F
G
C
100
150